NCEAP40T11G mosfet equivalent, automotive n-channel super trench power mosfet.
* VDS =40V,ID =150A
RDS(ON)=2.2mΩ (typical) @ VGS=10V
RDS(ON)=3.3mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistan.
that
require extremely high le.
The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power losses
are minimized due to an extremely low combination of RDS(ON) and
Qg.
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