NCEAP40T11G Datasheet Automotive N-Channel Super Trench Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number	NCEAP40T11G
Manufacturer	NCE Power Semiconductor
File Size	663.87 KB
Description	Automotive N-Channel Super Trench Power MOSFET
Datasheet	NCEAP40T11G Datasheet

The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

http://www.ncepower.com NCEAP40T11G NCE Automotive N-Channel Super Trench Power.

VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP40T11G NCEAP40T11G DFN5X6-8L Reel Size - Tape w.

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