NCEAP40T11G mosfet equivalent, automotive n-channel super trench power mosfet.
* VDS =40V,ID =150A
RDS(ON)=2.2mΩ (typical) @ VGS=10V
RDS(ON)=3.3mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistan.
that
require extremely high le.
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